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产品信息
Single 1.65V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (tV ) of 6ns maximum User configurable page size 256 bytes per page (default) 264 bytes per page (customer selectable option) One SRAM data buffer (256/264 bytes) Flexible programming options Byte/Page Program (1 to 256/264 bytes) directly into main memory Buffer Write Buffer to Main Memory Page Program Single Command Page Read-Modify-Write Option Flexible erase options Page Erase (256/264 bytes) Block Erase (2KB) Sector Erase (32KB) Chip Erase (2-Mbits) 128-byte Security Register 128 bytes factory programmed with a unique identifier Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low-power dissipation 300nA Ultra-Deep Power-Down current (typical) 5μA Deep Power-Down current (typical) 25μA Standby current (typical) 7mA Active Read current (typical) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Complies with full industrial temperature range Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.150ʺ wide and 0.208" wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
