深圳市谷科智电子有限公司

R2103S产品特点：

流动通道为引导操作而设计的　　

完全操作+ 600 v 　　

宽容负瞬态电压　　

dV / dt免疫　　

门驱动供应范围从10到20 v 　　

欠压锁定　　

3.3 v,5 v和15 v逻辑兼容　　

Cross-conduction预防逻辑　　

匹配渠道的传播延迟　　

内部设置停歇时间　　

高压侧与欣阶段输入输出　　

低端林,输出与输入

 Floating channel designed for bootstrap operation

 Fully operational to +600V

 Tolerant to negative transient voltage

 dV/dt immune

 Gate drive supply range from 10 to 20V

 Undervoltage lockout

 3.3V, 5V and 15V logic compatible

 Cross-conduction prevention logic

 Matched propagation delay for both channels

 Internal set deadtime

 High side output in phase with HIN input

 Low side output out of phase with LIN input

IR2103S产品目录：

IR2103S产品描述：

IR2103(S)是高电压、高功率MOSFET和速度IGBT驱动依赖高和低侧输出引用频道。免疫CMOS技术专有HVIC和门闩使加固的整体结构。输入的逻辑与标准CMOS兼容或LSTTL输出,3.3 v逻辑。输出驱动特性高脉冲电流缓冲阶段为司机cross-conduction而设计的。流动通道可用于驱动一个n沟道功率MOSFET和IGBT吗高压侧配置运营600伏特。

The IR2103(S) are high voltage, high speed power MOSFET and

IGBT drivers with dependent high and low side referenced output

channels. Proprietary HVIC and latch immune CMOS technologies

enable ruggedized monolithic construction. The logic input is

compatible with standard CMOS or LSTTL output, down to 3.3V

logic. The output drivers feature a high pulse current buffer stage

designed for minimum driver cross-conduction. The floating channel

can be used to drive an N-channel power MOSFET or IGBT in the

high side configuration which operates up to 600 volts.

IR2103S产品广泛应用于：

电磁炉

UPS电源

焊接

太阳能

工业器械

IR2103S产品一般信息

数据列表IR2103(S)(PbF)

标准包装  2,500包装  标准卷带 类别集成电路（IC）产品族PMIC - MOSFET，电桥驱动器 - 外部开关系列-其它名称IR2103SPBFTR

IR2103STRPBF-ND

IR2103STRPBFTR-ND

规格

供应商器件封装8-SOIC N安装类型表面贴装封装/外壳8-SOIC（0.154"，3.90mm 宽）工作温度-40°C ~ 125°C延迟时间680ns电压 - 电源10 V ~ 20 V电流 - 峰值210mA输入类型反相和非反相输出数2配置半桥配置数1高压侧电压 - 值（自举）600V